| Numéro |
J. Phys. IV France
Volume 132, March 2006
|
|
|---|---|---|
| Page(s) | 127 - 132 | |
| DOI | https://doi.org/10.1051/jp4:2006132025 | |
| Publié en ligne | 11 mars 2006 | |
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 127-132
DOI: 10.1051/jp4:2006132025
1 ELETTRA and SISSA/ISAS, Via Beirut 2-4, 34014 Trieste, Italy
2 Nova Gorica Polytechnic, Vipavska 13, 5000 Nova Gorica, Slovenia
© EDP Sciences 2006
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 127-132
DOI: 10.1051/jp4:2006132025
Thermal diffusion of indium in perylenetetracarboxylic dianhydride
R. Hudej1 and G. Bratina21 ELETTRA and SISSA/ISAS, Via Beirut 2-4, 34014 Trieste, Italy
2 Nova Gorica Polytechnic, Vipavska 13, 5000 Nova Gorica, Slovenia
Abstract
Current-voltage (I-V) characteristic measurements of
Ag/3,4,9,10-Perylenetetracarboxylic Dianhydride/In/Si(001)
heterostructures demonstrate that when the structure temperature
approaches the In melting point the I-V characteristic changes from
rectifying to Ohmic and the current amplitude increases by several
orders of magnitude. The synchrotron radiation photoemission
investigation of the 3,4,9,10-Perylenetetracarboxylic Dianhydride
(PTCDA) layers of the same thickness grown on In in the same
temperature range show strong In diffusion throughout the PTCDA
layers as thick as 1 
m. The In4PTCDA coordination
compound was not observed on the PTCDA surface and it appears to be
limited to the region near the In/PTCDA interface [1].
© EDP Sciences 2006