| Numéro |
J. Phys. IV France
Volume 132, March 2006
|
|
|---|---|---|
| Page(s) | 91 - 94 | |
| DOI | https://doi.org/10.1051/jp4:2006132018 | |
| Publié en ligne | 11 mars 2006 | |
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 91-94
DOI: 10.1051/jp4:2006132018
1 Istituto di Struttura della Materia, Consiglio Nazionale delle Ricerche, Rome, Italy
2 INFM, Department of Physics, University of Rome Tor Vergata, Italy
© EDP Sciences 2006
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 91-94
DOI: 10.1051/jp4:2006132018
Surface structure and energy bands of 1/3 ML Sn/Ge(111)
P. Gori1, O. Pulci2 and A. Cricenti11 Istituto di Struttura della Materia, Consiglio Nazionale delle Ricerche, Rome, Italy
2 INFM, Department of Physics, University of Rome Tor Vergata, Italy
Abstract
The geometrical and electronic structure of 1/3
monolayer of Sn on the Ge(111) surface is investigated within
density functional theory. The well known 
and
reconstructions are studied in details, performing
also band structure calculations and simulating STM images. Our
results confirm that the 1U-2D structure is the more
favorable one, not only from an energetic point of view but also
from a comparison with STM experiments. On the other hand, the
static room temperature electronic band structure of the
hardly compares with the available photoemission
data, thus supporting the idea of a dynamical flipping of the Sn
ad-atoms.
© EDP Sciences 2006