| Numéro |
J. Phys. IV France
Volume 132, March 2006
|
|
|---|---|---|
| Page(s) | 87 - 90 | |
| DOI | https://doi.org/10.1051/jp4:2006132017 | |
| Publié en ligne | 11 mars 2006 | |
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 87-90
DOI: 10.1051/jp4:2006132017
1 LEOM (UMR 5512), École Centrale de Lyon, 69134 Ecully Cedex, France
2 ST Microelectronics, 38926 Crolles Cedex, France
© EDP Sciences 2006
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 87-90
DOI: 10.1051/jp4:2006132017
Two dimensional Sr silicate grown on Si(001) studied using X-ray Photoelectron Spectroscopy
M. El Kazzi1, G. Delhaye1, S. Gaillard1, 2, E. Bergignat1 and G. Hollinger11 LEOM (UMR 5512), École Centrale de Lyon, 69134 Ecully Cedex, France
2 ST Microelectronics, 38926 Crolles Cedex, France
Abstract
We used X-ray Photoemission Spectroscopy (XPS) to study the
structural and chemical properties of SrO grown by Molecular Beam
Epitaxy (MBE) on Si(001) substrates in the following conditions: (i)
low temperature growth at 30°C and (ii) high temperature
growth at 500°C. The crystalline quality of the film deposit
was controlled in-situ by Reflection High-Energy Electron
Diffraction (RHEED). The results show the growth, at low temperature
of epitaxial SrO; and at high temperature the formation of
crystalline silicate.
© EDP Sciences 2006