| Numéro |
J. Phys. IV France
Volume 132, March 2006
|
|
|---|---|---|
| Page(s) | 63 - 67 | |
| DOI | https://doi.org/10.1051/jp4:2006132012 | |
| Publié en ligne | 11 mars 2006 | |
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 63-67
DOI: 10.1051/jp4:2006132012
Université de Rennes 1, Équipe de Physique des Surfaces et Interfaces, UMR CNRS-Université No. 6627 PALMS, Bât. 11C, Campus de Beaulieu, 35042 Rennes Cedex, France
© EDP Sciences 2006
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 63-67
DOI: 10.1051/jp4:2006132012
Electronic properties of metal/MgO(001) interfaces
Y. Lu, C.K. Assi, J.C. Le Breton, P. Turban, B. Lépine, P. Schieffer and G. JézéquelUniversité de Rennes 1, Équipe de Physique des Surfaces et Interfaces, UMR CNRS-Université No. 6627 PALMS, Bât. 11C, Campus de Beaulieu, 35042 Rennes Cedex, France
Abstract
The Schottky barrier heights (SBH) at various metal-MgO interfaces
(Mg, Al, Ni, Fe, Pd, and Ag) were studied by ultraviolet and X-ray
photoelectron spectroscopy (UPS and XPS). In order to determine the
Schottky barrier height, the energy distance between the O2s core
level of MgO and the MgO valence band maximum (VBM) is determined to
be
eV at first. The Schottky barrier heights
variation with metal Pauling electronegativities is linear fitted
with a slope parameter of
.
© EDP Sciences 2006