| Numéro |
J. Phys. IV France
Volume 132, March 2006
|
|
|---|---|---|
| Page(s) | 57 - 61 | |
| DOI | https://doi.org/10.1051/jp4:2006132011 | |
| Publié en ligne | 11 mars 2006 | |
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 57-61
DOI: 10.1051/jp4:2006132011
1 Department of Physics, School of Science, the University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan
© EDP Sciences 2006
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 57-61
DOI: 10.1051/jp4:2006132011
Electrical conduction through a monatomic surface step
I. Matsuda1, 0, T. Hirahara1, M. Ueno1, R. Hobara1 and S. Hasegawa11 Department of Physics, School of Science, the University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan
Abstract
We have succeeded in measuring resistance across a single atomic
step at electrical conduction through a monatomic-layer metal on a
crystal surface. Using independent methods of direct electrical
conductivity measurement with four-tip scanning tunneling microscope
probes and scanning tunneling spectroscopy observation, the
conductivity across a monatomic step was found to be about
m-1. Through analyses of the Landauer
formula for 2D conductors and the recent theoretical calculations,
the electron transport across an atomic step is fairly modeled as a
tunneling process. Important formulas of surface conductivity
developed by the present research are given.
© EDP Sciences 2006