Numéro
J. Phys. IV France
Volume 132, March 2006
Page(s) 49 - 55
DOI https://doi.org/10.1051/jp4:2006132010
Publié en ligne 11 mars 2006
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 49-55

DOI: 10.1051/jp4:2006132010

The (3 $\times$ 2) $\beta $-SiC(001) surface reconstruction investigated by photoelectron diffraction in the backscattering regime

E.G. Michel1, 2, D. Dunham3, A. Tejeda1, 2, 0, P. Soukiassian2, 3, E. Rotenberg4 and J.D. Denlinger4

1  Departamento de Física de la Materia Condensada and Instituto de Ciencia de Materiales Nicolás Cabrera, Universidad Autónoma, 28049 Madrid, Spain
2  Commissariat à l'Énergie Atomique, Laboratoire SIMA associé à l'Université de Paris-Sud/Orsay, DSM-DRECAM-SPCSI, Bât. 462, Saclay, 91191 Gif-sur-Yvette Cedex, France
3  Department of Physics, Northern Illinois University, DeKalb, IL 60115-2854, USA
4  Advanced Light Source (ALS), Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA


Abstract
The atomic positions of the ($3\times 2$) reconstruction of the cubic polytype of SiC(001) are determined by using photoelectron diffraction in the backscattering regime. The comparison of multiple scattering spherical wave calculations with experimental data favours a modified version of the two-adlayer asymmetric dimer model. The atomic positions in the reconstructed layers are obtained from an R-factor refinement analysis. Atoms in the outermost layer form asymmetric dimers with a corrugation of (0.25 $\pm $ 0.10) Å. The second layer is also dimerized and originates rows of long and short dimers.



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