10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 49-55
DOI: 10.1051/jp4:2006132010

The (3 2) -SiC(001) surface reconstruction investigated by photoelectron diffraction in the backscattering regime

E.G. Michel^{1, 2}, D. Dunham³, A. Tejeda^{1, 2, 0}, P. Soukiassian^{2, 3}, E. Rotenberg⁴ and J.D. Denlinger<sup>4

1</sup>  Departamento de Física de la Materia Condensada and Instituto de Ciencia de Materiales Nicolás Cabrera, Universidad Autónoma, 28049 Madrid, Spain
²  Commissariat à l'Énergie Atomique, Laboratoire SIMA associé à l'Université de Paris-Sud/Orsay, DSM-DRECAM-SPCSI, Bât. 462, Saclay, 91191 Gif-sur-Yvette Cedex, France
³  Department of Physics, Northern Illinois University, DeKalb, IL 60115-2854, USA
⁴  Advanced Light Source (ALS), Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA

Abstract
The atomic positions of the () reconstruction of the cubic polytype of SiC(001) are determined by using photoelectron diffraction in the backscattering regime. The comparison of multiple scattering spherical wave calculations with experimental data favours a modified version of the two-adlayer asymmetric dimer model. The atomic positions in the reconstructed layers are obtained from an R-factor refinement analysis. Atoms in the outermost layer form asymmetric dimers with a corrugation of (0.25 0.10) Å. The second layer is also dimerized and originates rows of long and short dimers.

© EDP Sciences 2006