Numéro |
J. Phys. IV France
Volume 132, March 2006
|
|
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Page(s) | 41 - 47 | |
DOI | https://doi.org/10.1051/jp4:2006132009 | |
Publié en ligne | 11 mars 2006 |
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 41-47
DOI: 10.1051/jp4:2006132009
Multidisciplinary Nanotechnology Centre, School of Engineering, Swansea University, Swansea SA2 8PP, UK
© EDP Sciences 2006
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 41-47
DOI: 10.1051/jp4:2006132009
Electrical barriers at semiconductor interfaces: Some reflections and future challenges
R.H. Williams, K.S. Teng and S.P. WilksMultidisciplinary Nanotechnology Centre, School of Engineering, Swansea University, Swansea SA2 8PP, UK
Abstract
Interfaces between semiconductors and insulators, metals or other
semiconductors play a crucial role in the behaviour of solid state
electronic devices. It is therefore no surprise that techniques to
accurately control the electronic properties of such interfaces has
long been an ambitious goal. Here we consider some of the key
contributions to this area over several decades, concentrating in
particular on the role of dipole layers at semiconductor interfaces.
We consider the current state of our understanding with respect to
the fabrication of microelectronic and optical devices. Furthermore,
we present views on some of the future challenges particularly in
high performance optical devices and nanostructures.
© EDP Sciences 2006