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Numéro
J. Phys. IV France
Volume 132, March 2006
Page(s) 17 - 21
DOI https://doi.org/10.1051/jp4:2006132005
Publié en ligne 11 mars 2006
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 17-21
DOI: 10.1051/jp4:2006132005

Surface energy minimization struggle between Ge and Si on 4H-SiC(0001)-(3 $\times $ 3)

D. Dentel1, K. Aït-Mansour1, 2, M. Derivaz1, L. Kubler1, M. Diani3, D. Bolmont1 and J.L. Bischoff1

1  Laboratoire de Physique et de Spectroscopie Électronique, UMR CNRS 7014, Université de Haute Alsace, 68290 Mulhouse, France
2  Present address: Material Testing and Research (EMPA), 3602 Thun, Switzerland
3  Département de Physique, Faculté des Sciences et Techniques, Tanger, Marocco


Abstract
The Ge growth behaviour on the 3$\times $3 Si-rich surface termination of 4H-SiC(0001) has been investigated in this study. After the deposit of one Ge monolayer at room temperature by molecular beam epitaxy, the film is submitted to isochronal annealing cycles up to 1000°C. A phase separation between Si and Ge is observed during the annealing process accompanied by successive 2D/3D and unusual 3D/2D transitions for both elements. Si and Ge struggle for wetting the bare surface in order to minimize its surface energy. This behaviour seems also to be related to the strain difference induced by the misfit of Si ($\sim $25%) and Ge ($\sim $30%) with the 4H-SiC(0001) substrate.



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