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Numéro
J. Phys. IV France
Volume 132, March 2006
Page(s) 1 - 5
DOI https://doi.org/10.1051/jp4:2006132002
Publié en ligne 11 mars 2006
10th International Conference on the Formation of Semiconductor Interfaces
C. Girardeaux, et al.
J. Phys. IV France 132 (2006) 1-5
DOI: 10.1051/jp4:2006132002

Electronic structure of organic titanium bis-phthalocyanine on InAs(001)4 $\times$ 2-c(8 $\times$ 2)

P. De Padova1, C. Quaresima1, P. Perfetti1, B. Olivieri2, M.C. Richter3, O. Heckmann3, M. Zerrouki3, G. Pennesi4, A.M. Paoletti4, G. Rossi4 and K. Hricovini3

1  CNR-ISM, via Fosso del Cavaliere, 00133 Roma, Italy
2  CNR-ISAC, via Fosso del Cavaliere, 00133 Roma, Italy
3  LMPS, Université de Cergy-Pontoise, Neuville/Oise, 95031 Cergy-Pontoise, France
4  CNR-ISM, via Salaria km 29,300 CP 10, 00016 Monterotondo Stazione, Italy


Abstract
We investigated the electronic structure of ultra thin interface of organic titanium bis-phthalocyanine TiPc2 deposited on InAs(001)($4\times 2$)c-($8\times 2$) clean surface, by means of high-resolution core-levels and valence band (VB) photoelectron spectroscopies. In4d, As3d, and C1s core levels were measured for different TiPc2 thicknesses up to 1 monolayer. Surface core level shifts were found on both In4d and As3d core levels. These shifts originate from the interaction between $4\times 2-$c($8\times 2$) InAs reconstruction and organic molecules suggesting the presence of strong bounds. C1s core level exhibits a line shape attributed to the C-C and C-N bonds. The VB spectroscopy shows dramatic changes related to the interaction of the TiPc2 molecule with the InAs related surface states.



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