| Numéro |
J. Phys. IV France
Volume 131, December 2005
|
|
|---|---|---|
| Page(s) | 235 - 237 | |
| DOI | https://doi.org/10.1051/jp4:2005131060 | |
| Publié en ligne | 18 janvier 2006 | |
International Workshop on Electronic Crystals
S. Brazovskii, P. Monceau and N. Kirova
J. Phys. IV France 131 (2005) 235-237
DOI: 10.1051/jp4:2005131060
1 Division of Physics, Hokkaido University, Sapporo 060-0810, Japan
2 Division of Applied Physics, Hokkaido University, Sapporo 060-8628, Japan
© EDP Sciences 2005
S. Brazovskii, P. Monceau and N. Kirova
J. Phys. IV France 131 (2005) 235-237
DOI: 10.1051/jp4:2005131060
Imaging of NbSe2 nanotube by STM
K. Ichimura1, K. Tamura1, M. Ogata1, K. Nomura1, T. Toshima2 and S. Tanda21 Division of Physics, Hokkaido University, Sapporo 060-0810, Japan
2 Division of Applied Physics, Hokkaido University, Sapporo 060-8628, Japan
Abstract
NbSe2 nanotubes were studied by scanning
tunneling microscopy (STM). Topographic images of NbSe2 nanotubes on the substrate
of HOPG were taken at room temperature. The length of nanotubes is estimated as
300-2000 nm. Diameter of nanotubes is found to be several nm, which is much smaller than
that of multi-walled nanotubes, suggesting single-walled one. The bundle structure, which
consists of several ten nanotubes, and Y-junction were found similarly to carbon
nanotubes.
© EDP Sciences 2005