| Numéro |
J. Phys. IV France
Volume 131, December 2005
|
|
|---|---|---|
| Page(s) | 191 - 192 | |
| DOI | https://doi.org/10.1051/jp4:2005131047 | |
| Publié en ligne | 18 janvier 2006 | |
International Workshop on Electronic Crystals
S. Brazovskii, P. Monceau and N. Kirova
J. Phys. IV France 131 (2005) 191-192
DOI: 10.1051/jp4:2005131047
1 Institute of Physics, University of Zagreb, 10001 Zagreb, Croatia
2 Experimental Physics V, University of Augsburg, 86135 Augsburg, Germany
3 CRTBT-CNRS, BP. 166, 38042 Grenoble Cedex 9, France
© EDP Sciences 2005
S. Brazovskii, P. Monceau and N. Kirova
J. Phys. IV France 131 (2005) 191-192
DOI: 10.1051/jp4:2005131047
Doping effects on the low-energy excitations of the charge density wave system o-TaS3
D. Staresinic1, K. Biljakovic1, P. Lunkenheimer2, A. Loidl2 and J.C. Lasjaunias31 Institute of Physics, University of Zagreb, 10001 Zagreb, Croatia
2 Experimental Physics V, University of Augsburg, 86135 Augsburg, Germany
3 CRTBT-CNRS, BP. 166, 38042 Grenoble Cedex 9, France
Abstract
We report on the effect of doping on the relaxational dynamics and
the specific heat (C
of the charge density wave (CDW)
system o-TaS3. Isoelectronic substitution of Ta atoms with
0.2%-0.5% of Nb suppresses the primary relaxation process
responsible for the glass-like dielectric response of pure
o-TaS3 but only slightly affects the secondary process as well
as the low energy excitation (LEE) contribution to C
. Our
results show that the primary relaxation process is mainly due to
long range deformations of the CDW, which are prevented by doping.
The secondary process and the LEE contribution to C
originate from local topological defects of the CDW still remaining
in doped samples.
© EDP Sciences 2005