J. Phys. IV France
Volume 131, December 2005
Page(s) 191 - 192
Publié en ligne 18 janvier 2006
International Workshop on Electronic Crystals
S. Brazovskii, P. Monceau and N. Kirova
J. Phys. IV France 131 (2005) 191-192

DOI: 10.1051/jp4:2005131047

Doping effects on the low-energy excitations of the charge density wave system o-TaS3

D. Staresinic1, K. Biljakovic1, P. Lunkenheimer2, A. Loidl2 and J.C. Lasjaunias3

1  Institute of Physics, University of Zagreb, 10001 Zagreb, Croatia
2  Experimental Physics V, University of Augsburg, 86135 Augsburg, Germany
3  CRTBT-CNRS, BP. 166, 38042 Grenoble Cedex 9, France

We report on the effect of doping on the relaxational dynamics and the specific heat (C$_{\rm p})$ of the charge density wave (CDW) system o-TaS3. Isoelectronic substitution of Ta atoms with 0.2%-0.5% of Nb suppresses the primary relaxation process responsible for the glass-like dielectric response of pure o-TaS3 but only slightly affects the secondary process as well as the low energy excitation (LEE) contribution to C$_{\rm p}$. Our results show that the primary relaxation process is mainly due to long range deformations of the CDW, which are prevented by doping. The secondary process and the LEE contribution to C$_{\rm p}$ originate from local topological defects of the CDW still remaining in doped samples.

© EDP Sciences 2005