J. Phys. IV France
Volume 131, December 2005
Page(s) 183 - 184
Publié en ligne 18 janvier 2006
International Workshop on Electronic Crystals
S. Brazovskii, P. Monceau and N. Kirova
J. Phys. IV France 131 (2005) 183-184

DOI: 10.1051/jp4:2005131044

Temperature hysteresis in dielectric and transport properties of charge density wave system o-TaS3

D. Dominko1, D. Staresinic1, K. Biljakovic1, P. Lunkenheimer2 and A. Loidl2

1  Institute of Physics, University of Zagreb, 10001 Zagreb, Croatia
2  Experimental Physics V, University of Augsburg, 86135 Augsburg, Germany

We report on the temperature hysteresis observed in low frequency dielectric response and in nonlinear conductivity of charge density wave (CDW) system o-TaS3. Between CDW transition temperature at 220 K and the glass transition temperature at 50 K both the amplitude and the relaxation time of the low frequency relaxational process are higher on heating than on cooling with similar temperature dependence as the well-known hysteresis in low field resistivity, but different hysteresis width. On the other hand, the hysteresis in the nonlinear conductivity can be seen only as the difference between the initial and subsequent I/V characteristics at given temperature implying field-induced relaxation from history dependent metastable states to stable, history independent state.

© EDP Sciences 2005