J. Phys. IV France
Volume 131, December 2005
Page(s) 167 - 170
Publié en ligne 18 janvier 2006
International Workshop on Electronic Crystals
S. Brazovskii, P. Monceau and N. Kirova
J. Phys. IV France 131 (2005) 167-170

DOI: 10.1051/jp4:2005131040

History dependence, memory and metastability in electron glasses

M. Müller and E. Lebanon

Center for Materials Theory, Serin Physics Laboratory, Rutgers University, 136 Frelinghuysen Road, Piscataway, New Jersey 08854-8019, USA

We discuss the history dependence and memory effects which are observed in the out-of-equilibrium conductivity of electron glasses. The experiments can be understood by assuming that the local density of states retains a memory of the sample history. We provide analytical arguments for the consistency of this assumption, and discuss the saturation of the memory effect with increasing gate voltage change. This picture is bolstered by numerical simulations at zero temperature, which moreover demonstrate the incompressibility of the Coulomb glass on short timescales.

© EDP Sciences 2005