Numéro |
J. Phys. IV France
Volume 128, September 2005
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Page(s) | 41 - 44 | |
DOI | https://doi.org/10.1051/jp4:2005128007 |
J. Phys. IV France 128 (2005) 41-44
DOI: 10.1051/jp4:2005128007
Environmentally safe synthesis of SrBi2Ta2O9 and SrBi2Nb2O9 thin films
G. González-Aguilar, M. Elisabete, V. Costa and I.M. Miranda SalvadoDepartamento de Engenharia Cerâmica e do Vidro and CICECO, Universidade de Aveiro, Campus de Santiago, Aveiro 3810-193, Portugal
Abstract
The modern industry of electronic devices has driven the
development of new synthesis methods for producing materials with the
desired properties. Most of these methods rely on reagents and solvents that
are toxic for human health and environment. For example, it has been
reported that the preparation of thin films by metallorganic deposition
methods (MOD) often requires noxious chemicals. SrBi2Ta2O9
(SBT) and SrBi2Nb2O9 (SBN) are ferroelectric compounds with
important applications as non volatile ferroelectric random access memories
(NVFRAM). The advantage of being lead-free compounds is partially loss if
the necessary efforts for making their precursors synthesis as safe as
possible are not made. In this work a new method using an ethanol-based
solution and starting from the acetates of the desired cations for obtaining
SBT and SBN thin films is described. The properties of the obtained films
demonstrate the good quality of the so prepared materials: the remnant
polarization (Pr) values are around 6 C/cm2 and 10 C/cm2 for stoichiometric SBT and SBN respectively, and the observed
leakage currents stay below 3A for applied fields of 240 kV/cm2.
These characteristics indicate the present method to be adequate for
producing ferroelectric materials with suitable properties for memories
applications.
© EDP Sciences 2005