J. Phys. IV France
Volume 126, June 2005
Page(s) 23 - 26

J. Phys. IV France 126 (2005) 23-26

DOI: 10.1051/jp4:2005126005

Growth of $\alpha$-GaPO $_{{\bf
4}}$ and $\alpha$-GeO $_{{\bf 2}}$ single crystals by the flux method

M. Beaurain, P. Armand and P. Papet

LPMC, UMR 5617, UMII, CC003, Place E. Bataillon, 34095 Montpellier Cedex 5, France

Colorless and transparent single crystals of the piezoelectric materials $\alpha$-GaPO4 and $\alpha$-GeO2 have been grown by the spontaneous nucleation method from Li2Mo3O10 flux at high temperature. Lattice parameters of the hexagonal-phase crystals have been measured by a single crystal X-ray diffraction method. Results of the infrared measurement have indicated the possibility of growing almost hydroxyl-free $\alpha$-GaPO4 crystals by the flux method. Thermal analyses have pointed out the phase transformation $\alpha$-quartz GaPO $_{4} \leftrightarrow \beta$-cristobalite GaPO4.

© EDP Sciences 2005