| Numéro |
J. Phys. IV France
Volume 125, June 2005
|
|
|---|---|---|
| Page(s) | 469 - 472 | |
| DOI | https://doi.org/10.1051/jp4:2005125110 | |
J. Phys. IV France 125 (2005) 469-472
DOI: 10.1051/jp4:2005125110
Characterisation of In2S3 and ZnO thin films for photovoltaic application using Photothermal deflection technique
M. Paulraj1, S. Ramkumar2, P.R. Amjith, T. Therasa John1, P.M. Ratheeshkumar1, C. Sudhakartha1, K.P. Vijayakumar1 and K.G.M. Nair31 Department of Physics, Cochin University of Science and Technology, Kochi 682022, India
2 Rajagiri School of Engineering and Technology, Rajagiri Valley, Kakkanad, Kochi 682030, India
3 Materials Science Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102, India
Abstract
ZnO and In2S3 thin films useful for photovoltaic application were studied using Photothermal deflection (PTD) spectroscopy. Mobility of carriers obtained from PTD was found to be in good agreement with reported values. Thickness measurements were also carried out. It was found to be in good agreement with stylus method.
© EDP Sciences 2005