J. Phys. IV France
Volume 125, June 2005
Page(s) 435 - 438

J. Phys. IV France 125 (2005) 435-438

DOI: 10.1051/jp4:2005125102

Photoacoustic investigations of thermal and electronic properties of single crystal Ge doped with Cr

D. Vasiljevic-Radovic1, P.M. Nikolic2, K.T. Radulovic2, A.I. Bojicic2, D. Lukovic2, S. Savic2, S. Vujatovic2, V. Blagojevic3, L. Lukic4 and D. Urosevic5

1  IHTM-Institute of Microelectronic Technologies and Single Crystals, Njegoseva 12, 11000 Belgrade, Serbia
2  Institute of Technical Sciences of the Serbian Academy of Sciences and Arts, Knez Mihailova 35/IV, Belgrade, Serbia
3  Faculty of Electrical Engineering of Belgrade University, Bulevar Kralja Aleksandra 73, 11000 Belgrade, Serbia
4  IRITEL, Batajnicki put 23, 11000 Belgrade, Serbia
5  Mathematical Institute of Serbian Academy of Sciences and Arts, Knez Mihailova 35/II, 11000 Belgrade, Serbia

A high purity single crystal Ge with a (111) orientation was doped with Cr. A thin film of Cr was evaporated and then diffused into Ge substrate. The photoacoustic PA amplitude and phase spectra were measured and numerically analyzed. The substitution of Cr in Ge produces a compensation effect.

© EDP Sciences 2005