J. Phys. IV France
Volume 125, June 2005
Page(s) 371 - 374

J. Phys. IV France 125 (2005) 371-374

DOI: 10.1051/jp4:2005125086

Photothermal and optical characterization of Te-doped GaSb

R. Velazquez1, 2, I. Rojas3, 4, J. García-Rivera1, 4, J. Mendoza Alvarez5 and M.E. Rodriguez1

1  Centro de Física Aplicada y Tecnología Avanzada de la UNAM, Juriquilla, Querétaro, Mexico
2  Instituto Tecnológico de Querétaro, Av. Tecnológico s/n, Querétaro, Mexico
3  Universidad Tecnológica de Querétaro, Av. Pie de la Cuesta s/n, Querétaro, Qro, Mexico
4  Posgrado en Ciencia e Ingeniería de Materiales, UNAM, Mexico
5  Departamento de Física, CINVESTAV, México, Av. IPN 2508, Mexico, DF, Mexico

Photothermal radiometry (PTR) signals obtained with a highly focused laser beam were used to obtain three-dimensional PTR amplitude and phase thermoelectronic images of a GaSb wafer doped with Te. The thermoelectronic images were carried out at 10 kHz, corresponding to an optimal difference in phase and amplitude signals. The results indicate that the concentration of Tellurium (Te) is non homogeneous over the full wafer because the thermoelectronic image shows high plasma componens at the ends sides of the wafer; microRaman spectroscopy was used to characterize Te presence along the sample. At the center of the wafer $\mu$-Raman spectra show a decrease in the GaSb signal that could be related with changes in the crystalline quality, non evidence of Te-Te bonds was found.

© EDP Sciences 2005