J. Phys. IV France
Volume 125, June 2005
Page(s) 233 - 236

J. Phys. IV France 125 (2005) 233-236

DOI: 10.1051/jp4:2005125055

High-temperature thermal wave measurements of Cu-C interface systems

S. Chotikaprakhan1, 2, D. Dietzel1, J. Pelzl1, E. Neubauer3, 4 and B.K. Bein1

1  Exp. Physics III, Solid State Spectroscopy, Ruhr-University, 44780 Bochum, Germany
2  Department of Physics, Faculty of Science, Kasetsart University, Bangkok 10900, Thailand
3  ARC Seibersdorf Research GmbH, Dept. Materials and Production Engineering, Austria
4  Thin Film Group, Solid State Physics, TU Wien, Austria

Photothermal measurements on Cu-C interface systems before and after annealing, combined with mechanical measurements of the adhesion strength, have shown that both the depth profile of the effective thermal properties and the adhesion strength change considerably with high-temperature annealing processes. To study these effects in more detail, modulated IR radiometry has been applied as a function of temperature. Two effects are observed between 200°C and 250°C which are interpreted as re-crystallization of the RF sputter-deposited initially amorphous Cu films, accompanied by an increase of the thermal contact resistance between Cu film and carbon substrate. The irreversible strong changes of the effective thermal properties are confirmed by frequency-dependent measurements, run at constant temperatures before, during, and after repeated heating processes.

© EDP Sciences 2005