J. Phys. IV France
Volume 118, November 2004
Page(s) 203 - 211

J. Phys. IV France 118 (2004) 203-211

DOI: 10.1051/jp4:2004118024

High-resolution X-ray diffractometry and X-ray reflectometry techniques for structural studies of complicated thin-layered heterostructures: Complementarity between Fourier Transform-based procedures and simulation softwares

O.Durand, A. De Rossi and A. Bouchier

Thales Research and Technology France, Domaine de Corbeville, 91404 Orsay Cedex, France

Both x-ray reflectometry and high-resolution x-ray diffractometry techniques are used for the assessment of individual layer thicknesses and interfacial profiles inside complicated heterostructures, such as semi-conductor multilayers. In particular, the use of Fourier transform-based numerical treatments applied to both the reflectivity curves and the high-resolution diffraction profiles allows a fast and precise determination of the individual layer thicknesses. Moreover, we show the potentiality of this method by reporting x-ray reflectometry and diffractometry studies on waveguides structures and superlattices. Typical layer thicknesses from 0.5 nm to more than 1 $\mu$m are accessible with these methods. We show the complementarity of both x-ray reflectometry and high-resolution diffraction techniques. Finally, the reliability of using a simulation software for the assessment of complicated interfacial roughness, such as segregation profiles, is reported. Key wordx-ray reflectometry, high-resolution x-ray diffractometry, semi-conductor heterostructures, thickness determination, Fourier Transform, interfacial segregation profiles.

© EDP Sciences 2004