J. Phys. IV France
Volume 110, September 2003
|Page(s)||827 - 831|
J. Phys. IV France 110 (2003) 827
Reshock behavior of silicon carbideD.P. Dandekar1, W.D. Reinhart2 and L.C. Chhabildas2
1 Army Research Laboratory, AMSRL-WM-TD Aberdeen Proving Ground, MD 21005-5066, U.S.A.
2 Sandia National Laboratories, MS 1181, Albuquerque, New Mexico 87185-1181, U.S.A.
The shear strength of a ceramic is an important material property which is indicative of its behaviour under impact loading condition. The brittle nature of ceramics suggest that impact loading of a ceramic attained due to subsonic impact could change the initial shear strength of the ceramic. If so, the subsequent behaviour of the ceramic may not be dependent on the the initial strength. Thus, it is necessary to determine the shear strength of a cermaic under single and multiple impacts. The present work determines the change in the shear strength of silicon carbide under a single shock, shock-reshock, and shock-release wave propagation, respectively. The material used in this work is marketed by CERCOM Inc. as SiC-B. The results of this work indicate that shear strength of SiC-B increases under shock-reshock.
© EDP Sciences 2003