| Numéro |
J. Phys. IV France
Volume 109, June 2003
|
|
|---|---|---|
| Page(s) | 1 - 8 | |
| DOI | https://doi.org/10.1051/jp4:20030646 | |
J. Phys. IV France 109 (2003) 1
DOI: 10.1051/jp4:20030646
Thermal conductivity of laser mirror coatings measured by photothermal method
J. Bodzenta1, B. Burak1, A. Jagoda2 and B. Stanczyk21 Institute of Physics, Silesian University of Technology, Krzywoustego 2, 44-100 Gliwice, Poland
2 Instituts of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw, Poland
Abstract
Thermal properties of thin AlN, AlN-GaN and Si
3N
4 films are investigated. The investigated films have
different thickness (~90 nm and ~270 nm) and are deposited on different substrates (Si and GaAs). Photothermal
measuring method based on thermal wave propagation in layered structure in 3D geometry is used. A new method
for experimental data analysis is proposed. The analysis is carried out after transformation of measured dependences
to the inverse space. Obtained results show that the thermal conductivity is higher for films deposited on GaAs
substrates and for AIN-GaN films.
© EDP Sciences 2003