J. Phys. IV France
Volume 104, March 2003
Page(s) 463 - 466

J. Phys. IV France
104 (2003) 463
DOI: 10.1051/jp4:20030123

Effect of focused X-rays on micrometer-thick insulating layers in scanning photoelectron microscopy

H.J. Shin1, 2, M.K. Lee1, G.B. Kim1 and C.K. Hong1

1  PLS, Pohang Accelerator Laboratory, Pohang University of Science and Technology (POSTECH), Pohang, Korea
2  Physics Department, POSTECH, Pohang, Korea

Focused x-rays on insulating layers produce local charges and the local charges result in kinetic energy shift in photoelectron spectra. In our study, when the thickness of the insulating layers was in the range of micrometer, the amount of kinetic energy shift initially increased within seconds to a value depending on the thickness and chemical composition of the insulator. The amount of energy shift stayed at the same value as long as the insulator was resistant to radiation damage. When the insulator was susceptible to radiation damage, then the amount of energy shift decreased as a function of time. The main cause of this decrease is attributed to conductivity increase due to chemical state change at the x-ray exposed volume of the insulator. The implication of the results is that scanning photoelectron microscopy (SPEM) can be applied for investigation of microstructures containing insulating materials; for example, SPEM can be used for depth-probe conducting microstructures embedded in micrometer-thick insulating layers. This study was performed with a SPEM at the Pohang Light Source, with an x-ray intensity at the focused area of ~10 9 photons/(s. $\mu$m 2).

© EDP Sciences 2003