Focused-ion-beam fabricated charge density wave devices

Abstract
We have fabricated a variety of Charge-Density-Wave (CDW) devices using a focused-ion-beam (FIB) process. The FIB is used to etch any desired geometry in crystals, like constrictions, tears, trenches, zigzag patterns etcetera. We have studied the electrical transport of these devices. This study includes: finite size effects (e.g. dependence of the threshold for CDW sliding on the width while maintaining the same thickness of samples), conduction perpendicular to the chains, geometrical effects and CDW junctions. We have found complete mode-locking on CDW constrictions, indicating that the high-quality crystal properties are preserved after FIB processing. This makes the process a useful technique to study submicron CDW dynamics.