J. Phys. IV France
Volume 11, Numéro PR11, Décembre 2001International Conference on Thin Film Deposition of Oxide Multilayers Hybrid Structures
|Page(s)||Pr11-331 - Pr11-335|
J. Phys. IV France 11 (2001) Pr11-331-Pr11-335
Electronic devices based on semiconducting strontium titanateD. Marré, E. Bellingeri, I. Pallecchi, L. Pellegrino, A. Tumino and A.S. Siri
INFM, Dipartimento di Fisica, via Dodecaneso 33, 16146 Genova, Italy, and INFM-LAMIA, Corso Perrone 24, 16152 Genova, Italy
We explored the feasibility of employing strontium titanate SrTiO3 as semiconducting material in field effect and ferroelectric field effect epitaxial devices. Oxygen reduced SrTiO3-δ exhibits low temperatures mobility values comparable with those commonly found for silicon. By Pulsed Laser Deposition, we realized patterned field effect devices, showing a resistance modulation up to 90%. These results could open new perspectives for crystalline oxides electronics.
© EDP Sciences 2001