| Numéro |
J. Phys. IV France
Volume 11, Numéro PR11, Décembre 2001
International Conference on Thin Film Deposition of Oxide Multilayers Hybrid Structures
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|---|---|---|
| Page(s) | Pr11-169 - Pr11-173 | |
| DOI | https://doi.org/10.1051/jp4:20011127 | |
International Conference on Thin Film Deposition of Oxide Multilayers Hybrid Structures
J. Phys. IV France 11 (2001) Pr11-169-Pr11-173
DOI: 10.1051/jp4:20011127
1 Institute of Electrical Engineering, Slovak Academy of Sciences, Dubravska Cesta 9, 84239 Bratislava, Slovakia
2 Faculty of Mathematics, Physics and Informatics, Comenius University, Mlynska Dolina, 84248 Bratislava, Slovakia
© EDP Sciences 2001
J. Phys. IV France 11 (2001) Pr11-169-Pr11-173
DOI: 10.1051/jp4:20011127
SrTiO3 thin films on Si(110) and Si(100) substrates
M. Spankova1, S. Chromik1, I. Vavra1, S. Gazi1 and P. Kus21 Institute of Electrical Engineering, Slovak Academy of Sciences, Dubravska Cesta 9, 84239 Bratislava, Slovakia
2 Faculty of Mathematics, Physics and Informatics, Comenius University, Mlynska Dolina, 84248 Bratislava, Slovakia
Abstract
We present the preparation and structural properties of SrTiO3 thin films deposited on Si(100) and Si(110) substrates by on-axis rf magnetron sputtering. In order to reduce the oxide layer at the substrate-film interface, a l0nm thick Sr layer is deposited in-situ by electron beam evaporation prior to the deposition of the SrTiO3 films. The growth of the SrTiO3 films is influenced by the deposition temperature. XRD measurements reveal preferred (110) orientation for the SrTiO3 films grown at substrate temperature 750°C. Beside X-ray diffraction method the layers are investigated by Transmission Electron Microscopy in more detail. We observe epitaxial growth of the SrTiO3 layer if it is deposited on Si(110) substrate.
© EDP Sciences 2001