Numéro |
J. Phys. IV France
Volume 11, Numéro PR11, Décembre 2001
International Conference on Thin Film Deposition of Oxide Multilayers Hybrid Structures
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Page(s) | Pr11-103 - Pr11-107 | |
DOI | https://doi.org/10.1051/jp4:20011116 |
J. Phys. IV France 11 (2001) Pr11-103-Pr11-107
DOI: 10.1051/jp4:20011116
Chloride atomic-layer chemical vapor deposition of TiO2 with a chloride pretreatment of substrates
A. Niilisk1, A. Rosental1, T. Uustare2, A. Kasikov1 and A. Tarre11 Institute of Physics, University of Tartu, Riia 142, 51014 Tartu, Estonia
2 Center of Strategic Competence, University of Tartu, Jakobi 2, 51014 Tartu, Estonia
Abstract
A procedure for changing the course of the atomic-layer chemical vapor deposition (ALCVD) growth of TiO2 from TiCl4 and H2O on amorphous SiO2 substrates/underlayers at low temperatures is proposed. The changes are characterized by the real-time incremental dielectric reflection measurements and post-growth
spectrophotometry and reflection high-energy electron diffraction measurements. In the procedure, an ultrathin layer of the material is deposited and, subsequently, in situ inhomogeneously etched in the TiCl4 flow, both steps being performed at a temperature above 350°C. As a result, an ultrathin microrough mixed amorphous/anatase-phase surface layer is created. By using this layer as a seed layer, the crystalline-growth temperature of the material is reduced. So anatase (mixed with amorphous phase) TiO2 thin films on SiO2 substrates at 125°C are, for the first time, grown. The films are shown to be depth-inhomogeneous. The upper part of the films, when they are thicker, is well textured
© EDP Sciences 2001