International Conference on Thin Film Deposition of Oxide Multilayers Hybrid Structures

J. Phys. IV France 11 (2001) Pr11-47-Pr11-52
DOI: 10.1051/jp4:20011107

Epitaxial YBa₂Cu₃O_7-8 films : Crucial role of growth-induced linear defects in microwave properties

V.M. Pan¹, V.S. Flis¹, V.A. Komashko¹, O.G. Plys¹, C.G. Tretiatchenko¹, E.A. Pashitskii², A.N. Ivanyuta³, G.A. Melkov³, V.L. Svetchnikov⁴ and H.W. Zandbergen<sup>4

1</sup>  Department of Superconductivity, Institute for Mertal Physics of NAS of Ukraine, 03142 Kiev, Ukraine
²  Institute of Physics, National Academy of Sciences of Ukraine, 03022 Kiev, Ukraine
³  Department of Cryo- and Microelectronics, T. Shevchenko National University, 03127 Kiev, Ukraine
⁴  National Centre for HREM, Delft University of Technology, 2628 AL Delft, The Netherlands

Abstract
A significant contribution to high-frequency electromagnetic response of epitaxial YBCO films is supposed to be accounted for growth-induced linear defects. There are two major types of linear defects in the YBCO films : out-of-plane and in-plane edge dislocations. The out-of-plane edge dislocations are shown to play a remarkable role in the surface resistance due to their extended elastic strain fields around a normal core. In-plane edge dislocations do not contribute observably into HF losses, since strain fields around their cores are negligible. The area of suppressed order parameter per one dislocation line was estimated to be 8.10^-13) cm² at 77 K. When out-of- plane edge dislocation density is 10¹¹ lines/cm², the normal phase fraction in the film volume can reach approximately 10%. The heat instability induced by the linear defects is assumed to enhance the remarkable difference between microwave properties of YBCO single crystals and thin films and results in a nonlinear response.

© EDP Sciences 2001