J. Phys. IV France
Volume 11, Numéro PR3, Août 2001Thirteenth European Conference on Chemical Vapor Deposition
|Page(s)||Pr3-763 - Pr3-770|
J. Phys. IV France 11 (2001) Pr3-763-Pr3-770
Growth of BON thin films by plasma assisted MOCVD and study of deposition parameter effects on the film structureG.C. Chen, M.C. Kim, T.H. Kim, S.-B. Lee and J.-H. Boo
Department of Chemistry and Institute of Basic Science, Sungkyunkwan University, Suwon 440-746, Korea
BON thin film was firstly grown by use of low frequency (100 kHz) RF plasma assisted MOCVD with borate precursor. The effects of deposition parameters such as substrate temperature and reactive gases, etc., on the BON film structure were also studied with XPS, FT-IR, UV, TED and AFM. It was found that the composition in the film was influenced by both substrate temperature and reactive gas. The films grown at 500 °C under N2 plasma contained more N-content and less carbon with smooth surface. The film grown under this deposition condition possessed semiconductor property determined by PL and I-V data. For the formation of BON film, the gas phase reaction is more important rather than surface reaction. The experimental results showed that the excited N2 could effectively react with boron-containing radicals and remove carbon on the surface rather than NH3. The N content in the film would influence the IR feature peak of the BON as well as electrical conductivity.
© EDP Sciences 2001