J. Phys. IV France
Volume 11, Numéro PR3, Août 2001
Thirteenth European Conference on Chemical Vapor Deposition
Page(s) Pr3-731 - Pr3-738
Thirteenth European Conference on Chemical Vapor Deposition

J. Phys. IV France 11 (2001) Pr3-731-Pr3-738

DOI: 10.1051/jp4:2001392

Comparative characterization of nitrogen-rich CNx films prepared by different ICP-CVD techniques

C. Popov1, J. Bulir2, 3, L. Zambov1, M. Jelinek2 and M.-P. Delplancke-Ogletree3

1  University of Kassel, Institute of Technical Physics, Heinrich-Plett-Str. 40, 34109 Kassel, Germany
2  Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 18221 Prague 8, Czech Republic
3  Université Libre de Bruxelles, Chimie Industrielle, 50 avenue F.D. Roosevelt, 1050 Brussels, Belgium

Thin amorphous nitrogen-rich CNx films ([N/(C+N)≥0.5) have been prepared by two inductively coupled plasma chemical vapour deposition (ICP-CVD) techniques: using transport reactions from a solid carbon source and from CCl4/NH3/Ar and CCl4/N2/H2/Ar gas mixtures. Optical emission spectroscopy (OES) and quadrupole mass spectrometry were used to derive information about the plasma properties. The composition of the films was investigated by Auger electron spectroscopy (AES), wavelength dispersive X-ray (WDX) and elastic recoil detection (ERD) analyses, and the chemical bonding structure by X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared (FTIR) spectroscopy. In addition, several application relevant properties (mechanical, optical, electrical) of the nitrogen-rich CNx films were studied. The results of both deposition methods were compared and discussed on the base of the specificities of the processes.

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