| Numéro |
J. Phys. IV France
Volume 11, Numéro PR3, Août 2001
Thirteenth European Conference on Chemical Vapor Deposition
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|---|---|---|
| Page(s) | Pr3-669 - Pr3-674 | |
| DOI | https://doi.org/10.1051/jp4:2001385 | |
Thirteenth European Conference on Chemical Vapor Deposition
J. Phys. IV France 11 (2001) Pr3-669-Pr3-674
DOI: 10.1051/jp4:2001385
1 J.I.P. ELEC, 11 chemin du Vieux Chêne, 38240 Meylan Zirst, France
2 Institut für Oberflächentechnik und Plasmatechnische Werkstoffentwicklung (IOPW), Technische Universität Braunschweig, Germany
© EDP Sciences 2001
J. Phys. IV France 11 (2001) Pr3-669-Pr3-674
DOI: 10.1051/jp4:2001385
Characterization of a solvant-free vapour source for MOCVD
C. Jimenez1, H. Guillon1, B. Pierret1, O. Stadel2, J. Schmidt2, U. Krause2 and G. Wahl21 J.I.P. ELEC, 11 chemin du Vieux Chêne, 38240 Meylan Zirst, France
2 Institut für Oberflächentechnik und Plasmatechnische Werkstoffentwicklung (IOPW), Technische Universität Braunschweig, Germany
Abstract
A vapour source for MOCVD applications has been developed. This source presents a clear advantage when using solid precursors dissolved in an organic solvent. Vapour sources of solid precursors by direct heating are not reproducible; the use of a solution of one or more components is the best way to control the mass sent to the reactor accurately. Several solutions have been proposed to introduce the solution into the evaporation zone. In this work, we present the characterization of a vapour source that allows to separate the solvent from the precursors before introducing the precursors vapours into the deposition chamber. In this way, vapours from the precursors are only sent to the deposition chamber.
© EDP Sciences 2001