J. Phys. IV France
Volume 11, Numéro PR3, Août 2001
Thirteenth European Conference on Chemical Vapor Deposition
Page(s) Pr3-601 - Pr3-608
Thirteenth European Conference on Chemical Vapor Deposition

J. Phys. IV France 11 (2001) Pr3-601-Pr3-608

DOI: 10.1051/jp4:2001376

MOCVD of rhenium-containing complex oxides with the new thd-precursor

O.Yu. Gorbenko, S.I. Troyanov, A.A. Zakharov and A.A. Bosak

Chemistry Department, MSU, 119899 Moscow, Russia

Complex oxides containing rhenium, for instance, magnetoresistive double perovskites and Re-stabilised Hg high Tc superconductors, attract a significant attention. We developed a volatile rhenium compound compatible with the thd-complexes of metals by reaction of the product of the metal electrolysis with 2,2,6,6-tetramethylheptan-3,5-dion at the elevated temperature. The details of crystal structure of the compound are discussed. The blocks [ReO(thd)2](ReO4) form layered molecular structure. The compound was used in the single source MOCVD together with thd-complexes of different metals (Ba, La, Ho) producing films of the double oxides. The Restabilised Rex(Ba,Sr)2Ca2Cu3Oy (x=0.1-0.3) precursor films with high composition homogeneity and surface smoothness were deposited to be saturated with Hg under the high pressure.

© EDP Sciences 2001