J. Phys. IV France
Volume 11, Numéro PR3, Août 2001
Thirteenth European Conference on Chemical Vapor Deposition
Page(s) Pr3-531 - Pr3-537
Thirteenth European Conference on Chemical Vapor Deposition

J. Phys. IV France 11 (2001) Pr3-531-Pr3-537

DOI: 10.1051/jp4:2001367

Direct liquid injection MOCVD growth of TiO2 films using the precursor Ti(mpd)(dmae)2

A. Awaluddin1, M.E. Pemble1, A.C. Jones2 and P.A. Williams2

1  School of Sciences, University of Salford, Salford M5 4WT, U.K.
2  Department of Chemistry, University of Liverpool, Liverpool L69 3BX, U.K.

We describe a comparative study of the direct liquid injection CVD growth of TiO2 using the conventional precursor Ti(OPr1)4 and a new precursor Ti(mpd)(dmae)2 where mpd=2-methylpentane-2,4-diolate, CH3CHOCH2C(CH3)2O and dmae= N,N'dimethylaminoethoxide, OCH2CH2N(CH3)2. Data are presented which demonstrate that as compared to Ti(OPr1)4, use of this new precursor extends the available temperature window for growth, while producing films in which the proportion of anatase to rutile varies with growth conditions. Rutile formation is observed to be favoured by the use of higher growth temperatures and the use of oxygen as a constituent gas. We also show that like some other novel precursor systems, the addition of an oxygen flow reduces the growth rate significantly, yet also improves the morphology of the film as measured using atomic force microscopy. We comment briefly on the possible reasons for this behaviour.

© EDP Sciences 2001