J. Phys. IV France
Volume 11, Numéro PR3, Août 2001Thirteenth European Conference on Chemical Vapor Deposition
|Page(s)||Pr3-497 - Pr3-503|
J. Phys. IV France 11 (2001) Pr3-497-Pr3-503
Advances in copper CVD for the semiconductor industryJ.A.T. Norman
Schumacher, 1969 Palomar Oaks Way, Carlsbad, CA 92009, U.S.A.
The evolution of copper CVD is reviewed from the early efforts in metal CVD to the copper precursors and CVD processes currently under development for copper metallization in the semiconductor industry where copper is rapidly supplanting aluminum as the high speed interconnect metal of choice. Processing techniques for achieving adhesion of CVD copper to diffusion barrier materials are discussed and precursors for atomic layer deposition (ALD) of copper are described. In addition, unique abatement technologies for copper CVD are outlined that minimize the release of volatile copper species into the environment and enable the recycle of CVD by-products back to fresh copper precursor.
© EDP Sciences 2001