J. Phys. IV France
Volume 11, Numéro PR3, Août 2001
Thirteenth European Conference on Chemical Vapor Deposition
Page(s) Pr3-473 - Pr3-479
Thirteenth European Conference on Chemical Vapor Deposition

J. Phys. IV France 11 (2001) Pr3-473-Pr3-479

DOI: 10.1051/jp4:2001360

Synthesis of GaN particles in porous matrices by chemical vapor infiltration of single molecule precursors

H. Parala, A. Devi, W. Rogge, A. Birkner and R.A. Fischer

Lehrstuhl für Anorganische Chemie II, Organometallics and Materials Chemistry, Ruhr-University Bochum, Universitaetsstrasse 150, 44780 Bochum, Germany

The filling of porous materials like molecular sieves by semiconducting materials is explored as a concept to fabricate novel mesoscopic systems such as quantum wires, quantum dots for possible optoelectronic and photonic applications. The dimension and arrangement of the incorporated material is dictated by the shape, size and order of crystallinity of the pores of the template that is being used. GaN is one such interesting semiconducting material whose fabrication in thin film form is well developed. However GaN in the form of nanoparticles has not been explored with much success and there are very few reports so far. This work represents a single source precursor approach for the synthesis of GaN nanoparticles by chemical vapour infiltration (CVI). The formation of GaN using MCM-41 as a porous host template and the characterisation of the nanoparticles by N2 sorption studies (BET), XRD, TEM, EDX, 71 GaNMR, elemental analysis will be addressed in this paper.

© EDP Sciences 2001