J. Phys. IV France
Volume 11, Numéro PR3, Août 2001Thirteenth European Conference on Chemical Vapor Deposition
|Page(s)||Pr3-301 - Pr3-306|
J. Phys. IV France 11 (2001) Pr3-301-Pr3-306
Nucleation and growth of silicon on ceramic substrates by RTCVD at atmospheric pressureA. Slaoui and S. Bourdais
Laboratoire PHASE-CNRS, 23 rue du Loess, 67037 Strasbourg cedex, France
Thin-film solar cells from silicon on insulating substrates (SOI) are a serious option to reduce the cost and silicon production mass. Here we investigated nucleation and growth of silicon on alumina and mullite ceramics in a lamps-heating assisted CVD reactor working at atmospheric pressure with trichlorosilane as a precursor gas. The nucleation density and the structural quality of the deposited Si layers were analyzed as a function of the deposition conditions and the structure and composition of the ceramic substrate. The results were compared with the well-known growth mechanism of silicon on amorphous substrates like SiO2. Optimal conditions allowed deposition of 20-30µm thick polycrystalline silicon with grains up 15µm in size and <110> oriented. These layers are very suitable for solar cells processing.
© EDP Sciences 2001