Thirteenth European Conference on Chemical Vapor Deposition

J. Phys. IV France 11 (2001) Pr3-231-Pr3-238
DOI: 10.1051/jp4:2001329

Low pressure chemical vapor deposition of silicon oxynitride films using tetraethylorthosilicate, dichlorosilane and ammonia mixtures

V. Em. Vamvakas¹, R. Berjoan², S. Schamm³, D. Davazoglou¹ and C. Vahlas<sup>4

1</sup>  Institute of Microelectronics, NCSR "Demokritos", P.O. Box 60228, 15310 Aghia Paraskevi, Greece
²  Institut de Matériaux et Procédés, CNRS, rue du Four Solaire, 66125 Odeillo - Font-Romeu, France
³  Centre d'Élaboration de Matériaux et d'Études Structurales, CNRS, BP. 4347, 31055 Toulouse cedex 4, France
⁴  Centre Interuniversitaire de Recherche et d'Ingénierie des Matériaux, CNRS-INPT-UPS, ENSIACET, 118 route de Narbonne, 31077 Toulouse cedex 4, France

Abstract
This work describes the thermodynamic simulation and the experimental investigation of the chemical vapor deposition of silicon oxide and silicon oxynitride films starting from tetra-ethyl-orthosilicate (TEOS), dichlorosilane (DCS) and ammonia mixtures. The simulation reveals that the co-deposition of silicon oxynitride - silicon dioxide films is possible at 710° C and 300 mTorr if the DCS/TEOS ratio is greater than one. If the DCS/TEOS ratio is less than one, the deposited films are exclusively composed of silicon dioxide. These predictions were confirmed in corresponding experiments by using Fourier Transform Infrared spectroscopy (FTIR), X-ray Photoelectron Spectroscopy (XPS), Auger Electron Spectroscopy (AES) and Electron Energy Loss Spectroscopy (EELS) for the characterization of the obtained films.

© EDP Sciences 2001