| Numéro |
J. Phys. IV France
Volume 11, Numéro PR3, Août 2001
Thirteenth European Conference on Chemical Vapor Deposition
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|---|---|---|
| Page(s) | Pr3-1131 - Pr3-1137 | |
| DOI | https://doi.org/10.1051/jp4:20013142 | |
J. Phys. IV France 11 (2001) Pr3-1131-Pr3-1137
DOI: 10.1051/jp4:20013142
Study of SiO2-films deposited by adding N2O or O2 to TEOS in photo-chemical vapor deposition at room temperature
Y. Motoyama1, 2, J.-I. Miyano1, 2, K. Toshikawa1, Y. Yagi1, H. Yanagida3, K. Kurosawa2 and A. Yokotani21 LSI Process Engineering Department, Miyazaki OKI Electric Co., Ltd., Kiyotake-cho, Miyazaki 889-1695, Japan
2 University of Miyazaki, Gakuen-kibanadai, Miyazaki 889-2192, Japan
3 Institute for Molecular Science, Myodaiji-cho, Okazaki 444-8585, Japan
Abstract
We have developed a new scheme for SiO2-film preparation in which tetraethoxyorthosilicate (TEOS : Si(OC2H5)4) is photo-dissociated by vacuum ultraviolet Xe2 excimer radiation (λ = 172 nm). The SiO2-films can be deposited at room temperature include a considerable amount of C and H atoms and/or molecules. They show relative-dielectric constants and leakage currents as low as the films prepared with ozone-assisted CVD. We have tried to avoid impurity inclusion by adding O2 or N2O to the raw material TEOS. The addition of O2 results in decrease of C-H inclusion. We have evaluated the electrical properties and gap-filling characteristics by adding the gas. The SiO2-films prepared with the photo-CVD could be useful for a multi-layer-inter-connection technologies of CMP-less and free environmental disruption at ULSI devices processing.
© EDP Sciences 2001