| Numéro |
J. Phys. IV France
Volume 11, Numéro PR3, Août 2001
Thirteenth European Conference on Chemical Vapor Deposition
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|---|---|---|
| Page(s) | Pr3-1109 - Pr3-1116 | |
| DOI | https://doi.org/10.1051/jp4:20013139 | |
Thirteenth European Conference on Chemical Vapor Deposition
J. Phys. IV France 11 (2001) Pr3-1109-Pr3-1116
DOI: 10.1051/jp4:20013139
1 State-Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, 710049 Xi'an, China
2 Laboratoire Microstructure et Mécanique des Matériaux, URA 1219 du CNRS, École Nationale Supérieure d'Arts et Métiers, 75013 Paris, France
© EDP Sciences 2001
J. Phys. IV France 11 (2001) Pr3-1109-Pr3-1116
DOI: 10.1051/jp4:20013139
Diagnostics of TiN coatings process in pulsed D.C plasma enhanced chemical vapor deposition
S. Ma1, K. Xu1 and V. Ji21 State-Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, 710049 Xi'an, China
2 Laboratoire Microstructure et Mécanique des Matériaux, URA 1219 du CNRS, École Nationale Supérieure d'Arts et Métiers, 75013 Paris, France
Abstract
The pulsed d.c plasma in industrial scale chamber for plasma nitriding and plasma enhanced chemical vapor deposition was measured with a single-langmuir probe. The plasma density was increased with the increasing of the pulse voltage in plasma nitriding process, but decreased in an initial stage and than increased sharply when the voltage is beyond 700V in TiN coatings deposition. Such different behavior of pulse d.c plasma was due to the addition of TiCl4, which has a great effect on suppression of plasma density. However, a quality TiN coating was usually obtained at low density, which needs a relatively low voltage below 700V. It has also been shown that the deposition rate depends strongly on the N2 flow.
© EDP Sciences 2001