| Numéro |
J. Phys. IV France
Volume 11, Numéro PR3, Août 2001
Thirteenth European Conference on Chemical Vapor Deposition
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| Page(s) | Pr3-1103 - Pr3-1107 | |
| DOI | https://doi.org/10.1051/jp4:20013138 | |
J. Phys. IV France 11 (2001) Pr3-1103-Pr3-1107
DOI: 10.1051/jp4:20013138
Atomic layer deposition of CuxS
L. Reijnen, B. Meester, A. Goossens and J. SchoonmanLaboratory of Inorganic Chemistry, Julianalaan 136, 2628 Delft, The Netherlands
Abstract
Thin films of CuxS have been deposited by atomic layer deposition using copper(II) bistetramethylheptanedionate (Cu(thd)2) and hydrogen sulphide (H2S) as precursors. Self-limiting growth was obtained between 125°C and 250°C at a pressure of 2 mbar. Dependent on the temperature different crystalline phases formed. Below 175°C CuS (covellite) was obtained, while between 175°C and 300°C Cu1.8S (digenite) was deposited. The growth rate per cycle correlated to the deposited crystalline phase, the Cu(thd)2 pulse length, and the reactor pressure. Typical growth rates were 0.15 Å/cycle for Cu1.8S and 0.4 Å/cycle for CuS. It appears that the process is determined by Cu(thd)2 adsorption. Films were polycrystalline and consisted of 100 nm particles that grow in columns perpendicular to the surface.
© EDP Sciences 2001