| Numéro |
J. Phys. IV France
Volume 11, Numéro PR3, Août 2001
Thirteenth European Conference on Chemical Vapor Deposition
|
|
|---|---|---|
| Page(s) | Pr3-93 - Pr3-99 | |
| DOI | https://doi.org/10.1051/jp4:2001312 | |
J. Phys. IV France 11 (2001) Pr3-93-Pr3-99
DOI: 10.1051/jp4:2001312
MOCVD of lead-containing perovskites
A.A. Bosak1, A.N. Botev1, O.Yu. Gorbenko1, I.E. Graboy1, S.V. Samoilenkov1, A.R. Kaul1, C. Dubourdieu2 and J.-P. Sénateur21 Chemistry Department, MSU, 119899 Moscow, Russia
2 ENSPG/LMGP, BP. 46, 38402 Saint-Martin-d'Hères, France
Abstract
A self-tuning approach to the growth of lead-containing complex oxide films free of secondary phases was developed. Due to the volatility of lead oxide one can establish the process conditions when the phase purity is provided in spite of any fluctuations of the mass fluxes. An additional advantage is suppression of the surface roughening with the increase of the film thickness providing high smoothness (Sa = 1.2-1.5 nm) at the deposition rate up to 1µm/h. The effect is due to the quasi-liquid PbO-based surface layer activating the surface diffusion during the film growth. This approach was successfully used for the growth of single phase epitaxial CMR La1-xPbxMnO3 (x=0.1-0.6), ferroelectric PbTiO3 films, scintillator material PbWO4 and the multilayers which were characterised by XRD, SEM, EDX, RBS, HREM, AFM, electric and magnetic measurements.
© EDP Sciences 2001