J. Phys. IV France
Volume 11, Numéro PR3, Août 2001Thirteenth European Conference on Chemical Vapor Deposition
|Page(s)||Pr3-937 - Pr3-944|
J. Phys. IV France 11 (2001) Pr3-937-Pr3-944
Development of SiNx LPCVD processes for microtechnological applicationsB. Rousset, L. Furgal, P. Fadel, A. Fulop, D. Pujos and P. Temple-Boyer
LAAS-CNRS, 7 avenue du Colonel Roche, 31077 Toulouse cedex 4, France
Various silicon rich silicon nitride SiNx films have been deposited by low-pressure chemical vapour deposition (LPCVD) from dichlorosilane SiH2Cl2, and ammonia NH3. Deposition rate, refractive index, residual stress and SiNx stoichiometry are studied as a function of deposition parameters, evidencing the main influence of the NH3/SiH2Cl2 gas ratio. However, as such SiNx layers have special applications for micro-opto-electromechanical systems (MOEMS), the influences of the deposition conditions are more precisely studied for improving the uniformity properties along the load. In order to achieve this goal, different load configurations are tested and the use of non-isothermal furnace profiles is proposed in order to develop the LPCVD deposition technique of SiNx films for industrial microtechnological processes.
© EDP Sciences 2001