Numéro
J. Phys. IV France
Volume 11, Numéro PR3, Août 2001
Thirteenth European Conference on Chemical Vapor Deposition
Page(s) Pr3-923 - Pr3-930
DOI https://doi.org/10.1051/jp4:20013115
Thirteenth European Conference on Chemical Vapor Deposition

J. Phys. IV France 11 (2001) Pr3-923-Pr3-930

DOI: 10.1051/jp4:20013115

In situ characterization of atomic layer deposition of SrTiO3

A. Rahtu, T. Hänninen and M. Ritala

Department of Chemistry, University of Helsinki, P.O. Box 55, 00014 Helsinki, Finland


Abstract
The reaction mechanisms in the atomic layer deposition of SrO and SrTiO3 were studied with a quartz crystal microbalance and a quadrupole mass spectrometer at 325°C. The precursors were Sr(C5iPr3H2)2, Ti(OCH(CH3)2)4 and deuterated water. The main gaseous byproduct was C5iPr3H2. When SrO was grown on TiO2, the TiO2 surface affected the growth until it became covered with SrO. By contrat, the SrO surface did not have as significant effect to the growth of TiO2.



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