| Numéro |
J. Phys. IV France
Volume 11, Numéro PR3, Août 2001
Thirteenth European Conference on Chemical Vapor Deposition
|
|
|---|---|---|
| Page(s) | Pr3-85 - Pr3-91 | |
| DOI | https://doi.org/10.1051/jp4:2001311 | |
J. Phys. IV France 11 (2001) Pr3-85-Pr3-91
DOI: 10.1051/jp4:2001311
Thermodynamic and experimental study of low temperature ZrB2 chemical vapor deposition
J.F. Pierson1, T. Belmonte2 and H. Michel21 Centre de Recherches sur les Écoulements, les Surfaces et les Transferts, UMR 6000 du CNRS, Pôle Universitaire, BP. 71427, 25211 Montbéliard cedex, France.
2 Laboratoire de Science et Génie des Surfaces, UMR 7570 du CNRS, INPL-EdF, École des Mines, Parc de Saurupt, 54042 Nancy cedex, France
Abstract
A thermodynamic study of the Zr-B-H-Cl system is realised using a cornputer-aided Gibbs energy minimisation program. Effect of the total pressure and the atomic ratio of hydrogen to chlorine (Hl / Cl) on the CVD deposition diagram is investigated. The total pressure decrease lowers the minimal temperature for ZrB2 deposition. It reaches 780 K at 100 Pa. H / Cl ratio affects the ZrB2 + B codeposition domain area. A CVD deposition diagram at 800 K with isoyield curves is also presented. Zirconium diboride films are elaborated on quartz and Zircaloy-4 substrates using ZrCl4 and BCl3 precursors. Since ZrB2 films cannot be synthesised at temperature lower than 800 K by thermal CVD, an original CVD process enhanced by Ar-BCl3 post-discharge has been developed. At 733 K, films obtained using this process are composed of ZrB2 nanograins embedded in an amorphous solid solution of zirconium and boron oxides.
© EDP Sciences 2001