J. Phys. IV France
Volume 11, Numéro PR3, Août 2001
Thirteenth European Conference on Chemical Vapor Deposition
Page(s) Pr3-811 - Pr3-816
Thirteenth European Conference on Chemical Vapor Deposition

J. Phys. IV France 11 (2001) Pr3-811-Pr3-816

DOI: 10.1051/jp4:20013102

Room temperature deposition of GeO2 thin film using dielectric barrier discharge driven excimer lamps

Y. Maezono, H. Yanagita, K. Nishi, J.-I. Miyano, A. Yokotani, K. Kurosawa, N. Hishinuma and H. Matsuno

Department of Electrical and Electronics Engineering, Miyazaki University, 1-1 Gakuenibanadai Nishi, Miyazaki 889-2192, Japan

We discuss the fabrication of GeO2 and GeO2/SiO2 films at room temperature by photo-chemical vapor deposition. Excimer lamps were used for the light source, and tetraethoxyorthogermanate (TEOG) and tetraethoxyorthosilicate (TEOS), as raw materials. First, we fabricated GeO2 films from single-precursor TEOG. The surface of the films obtained with Ar2*, Kr2*, and Xe2* lamps was extremely smooth (Rrms ~0.3 nm). Second, we fabricated GeO2/SiO2 composite films from a mixed vapor of TEOS and TEOG. In this instance, we used a Xe2* lamp, which was able to produce films of good quality for both SiO2 and GeO2 individually. The refractive indices of the obtained films showed intermediate values between those of SiO2 (n = 1.46) and GeO2 (n = 1.60). The relationship between the Ge concentration in these films and the refractive indices was examined. We successfully obtained a GeO2/SiO2 composite material of higher refractive index than that of similar composites produced by conventional methods.

© EDP Sciences 2001