| Numéro |
J. Phys. IV France
Volume 11, Numéro PR3, Août 2001
Thirteenth European Conference on Chemical Vapor Deposition
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|---|---|---|
| Page(s) | Pr3-69 - Pr3-76 | |
| DOI | https://doi.org/10.1051/jp4:2001309 | |
J. Phys. IV France 11 (2001) Pr3-69-Pr3-76
DOI: 10.1051/jp4:2001309
(HFA)Cu . 1,5-COD as the prospective precursor for CVD-technologies : The electronic structure, thermodynamical properties and process of formation of thin copper films
T.I. Liskovskaya1, L.G. Bulusheva1, A.V. Okotrub1, S.A. Krupoder1, P.P. Semyannikov1, I. P. Asanov1, I.K. Igumenov1, A.V. Manaev2, V.F. Traven2 and A.G. Cherkov31 Institute of Inorganic Chemistry, SB RAS, Av. Lavrentieva 3, Novosibirsk 630090, Russia
2 D.I. Mendeleev University of Chemical Technology, Miusskaya Sq. 9, Moscow 125047, Russia
3 Institute of Semiconductor Physics, SB RAS, Av. Lavrentieva 13, Novosibirsk 630090, Russia
Abstract
The properties of (HFA)Cu . l,5-COD complex, being the prospective CVD-precursor for thin copper films for microelectronics, were investigated by UV (He 1) photoelectron, X-ray fluorescent spectroscopy and mass-spectroscopy together with ab initio calculations in approximation of density functional theory. The detailed analysis of energy and structure of highest occupied MO'S of (HFA)Cu . 1,5-COD was carried out. The thermodynamical and kinetical parameters of thermolysis reaction for (HFA)Cu . l,5-COD were determined and discussed. The initial stages of growth of thin copper films on the basis of this precursor (Si3N4 substrates) were studied by high-resolution transmission electron microscopy and X-ray photoelectron spectroscopy.
© EDP Sciences 2001