| Numéro |
J. Phys. IV France
Volume 11, Numéro PR3, Août 2001
Thirteenth European Conference on Chemical Vapor Deposition
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|---|---|---|
| Page(s) | Pr3-17 - Pr3-22 | |
| DOI | https://doi.org/10.1051/jp4:2001302 | |
J. Phys. IV France 11 (2001) Pr3-17-Pr3-22
DOI: 10.1051/jp4:2001302
Insights into the MOCVD process of GaN using single-source precursors. Matrix isolation : A powerful technique
J. Müller1, B. Witting2, H. Sternkicker2 and S. Bendix11 Anorganische Chemie II, Ruhr-Universität Bochum, 44780 Bochum, Germany
2 Institut für Anorganische Chemie der Technischen Hochschule Aachen, 52056 Aachen, Germany
Abstract
The gas-phase intermediates that resulted from the thermolysis of the single-source precursor Me2N(CH2)3Ga(N3)2 (6) have been investigated by matrix isolation IR spectroscopy. The fragmentation of 6 occurs above 450°C resulting in equal amounts of HN3 and Ga(N3). Gallium monoazide was characterized for the first time in argon matrices (vas(N3) at 2106.0 cm-1 and vs(N3) at 1340.3 cm-1). Apart from the azides, the thermolysis products NH3, H2C=CNMe, and HCN resulted in the most intense IR absorptions. Based on the fact that allyldimethylamine was not found among the thermolysis products and in comparison with the fragmentation of compounds of the type Me2N(CH2)3MX2 (1-4) a β-hydrogen elimination can be excluded as the initial fragmentation step of 6.
© EDP Sciences 2001