J. Phys. IV France
Volume 11, Numéro PR2, Juillet 2001X-Ray Lasers 2000
|Page(s)||Pr2-451 - Pr2-457|
J. Phys. IV France 11 (2001) Pr2-451-Pr2-457
The prospects of reflectometry and ellipsometry with Colorado State University tabletop XUV laserI.A. Artioukov1, B.R. Benware2, R.M. Fechtchenko1, J.J. Roca2, M. Seminario2, A.V. Vinogradov1 and M. Yamamoto3
1 P. N. Lebedev Physical Institute, 53 Leninsky Prospekt, Moscow 117924, Russia
2 Colorado State University, Electrical Engineering Department, Fort Collins, CO 80523, U.S.A.
3 Research Institute for Scientific Measurements, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980, Japan
The capillary discharge ArIX laser (wavelength 46.9nm) is a new device attractive for various applications due to its unique for XUV lasers properties : high average power and compactness. Reflectometry and ellipsometry are among them. The first is capable to provide fundamental data on optical constants of solids, which are still rather limited. Reflection coefficient in this spectral range is highly sensitive to the presence of an overlayer at the surface of a sample. This hinders bulk optical constants determination, but offers the possibility to study chemical contamination by ambience. The theory of reflection from a surface with a thin overlayer is developed. It enables to rigorously include overlayer into reflectometry data processing and derive separately the parameters of bulk and overlayer. Ellipsometry in general is more powerful than reflectometry method to measure optical constants. In addition it offers the accurate methods to measure film thickness and properties of magnetic materials. Unfortunately high quality analyzers and polarizers are not available in this spectral range, which requires specific approach to ellipsometric measurements. We discuss and use for this purpose Sc/Si multilayer structures.
© EDP Sciences 2001