Numéro
J. Phys. IV France
Volume 09, Numéro PR10, December 1999
International Workshop on Electronic Crystals
ECRYS-99
Page(s) Pr10-361 - Pr10-364
DOI https://doi.org/10.1051/jp4:19991096
International Workshop on Electronic Crystals
ECRYS-99

J. Phys. IV France 09 (1999) Pr10-361-Pr10-364

DOI: 10.1051/jp4:19991096

High dielectric permittivity in quasi-one-dimensional organic compounds (TMTTF)2X : Possible evidence for charge induced correlated state

F. Nad1, 2, P. Monceau1 and J. Fabre3

1  Centre de Recherches sur les Très Basses Températures, associé à l'Université Joseph Fourier, CNRS, BP. 166, 38042 Grenoble cedex 9, France
2  Institute of Radioengineering and Electronics, Russian Academy of Sciences, Mokhovaya 11, 103907 Moscow, Russia
3  Laboratoire de Chimie Structurale Organique, Université de Montpellier, 34095 Montpellier cedex 5, France


Abstract
Some peculiarities on temperature dependences of conduction and dielectric permittivity (growth up to high magnitude 105-106) have been found in (TMTTF)2X (X=Br, PF6) in the temperature range between room temperature and temperature of transition into spin ordered states. These features are connected probably with charge induced correlation and appropriate development of 4kF charge density wave in this temperature range



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