J. Phys. IV France
Volume 09, Numéro PR10, December 1999
International Workshop on Electronic Crystals
Page(s) Pr10-255 - Pr10-257
International Workshop on Electronic Crystals

J. Phys. IV France 09 (1999) Pr10-255-Pr10-257

DOI: 10.1051/jp4:19991064

NbSe3 : Fermi surface and magnetoresistance under uniaxial stress

G.X. Tessema1, B.K. Gamble1, J. Kuh1, M.J. Skove1, A.H. Lacerda2 and M. Bennett2

1  Clemson University, U.S.A.
2  NHMFL, Los Alamos National Laboratory, U.S.A.

The Fermi surface of NbSe3 below the two CDW transitions is still not very cleat. Large magnetoresistance and giant quantum oscillations have been seen at low temperature below the second CDW transition. The SdH oscillations are attributed to one or several small pieces of electron or hole pockets spared by the two CDW transitions at 145 and 59 K. In a previous low field study (µoH<8T) of the transverse magnetoresistance (H in the (b,c) plane) we have shown that the extremal area of one of these pockets decreases linearly with strain, ε, vanishing at ε = 2.5%. Here we extend our study into the high magnetic field regime (pulsed 60 T) and investigate the effect of uniaxial stress on the magnetoresistance (I//H). Our high field study is consistent with the fermiology study and shows that uniaxial stress leads to the obliteration of a small closed pocket. Above 1% strain the magnetoresistance is linear with H with no sign of saturation.

© EDP Sciences 1999